NONFERROELECTRIC EPITAXIAL SR-BI-TA OXIDE THIN-FILM WITH A HIGH DIELECTRIC-CONSTANT

Two kinds of epitaxial Sr-Bi-Ta oxides were grown on La0.5Sr0.5CoO3 (0 01)/LaAlO3 (001) substrates by pulsed laser deposition. At a temperatu re higher than 650 degrees C, c- axis oriented SrBi2Ta2O9 films could be deposited epitaxially. At 550 degrees C, an epitaxial film with a c ubic fluorite-like phase could be grown. Although the film with the cu bic phase does not show ferroelectric properties, it has good electric al properties which are suitable for high capacitance applications. (C ) 1998 American Institute of Physics. [S0003-6951(98)01143-7].