We have demonstrated that the atomic force microscope (AFM) operating
in air may be used to pattern narrow features in resist in a noncontac
t lithography mode. A micromachined AFM cantilever with an integrated
silicon probe tip acts as a source of electrons. The field emission cu
rrent from the tip is sensitive to the tip-to-sample spacing and is us
ed as the feedback signal to control this spacing. Feature sizes below
30 nm have been patterned in 65-nm-thick resist and transferred throu
gh reactive ion etching into the silicon substrate. We show that the s
ame AFM probe used for noncontact patterning can be used to image the
sample. In addition to eliminating the problem of tip wear, this nonco
ntact system is easily adapted to multiple-tip arrays where each canti
lever has an integrated actuator to adjust the probe height. (C) 1998
American Institute of Physics. [S0003-6951(98)04643-9].