HALL-COEFFICIENT AND RESISTIVITY OF AMORPHOUS TI1-XALX FILMS

The resistivity of codeposited amorphous Ti1-xAlx films has been measu red from 1.5 to 300 K over the composition range 0.4 less-than-or-equa l-to x less-than-or-equal-to 0.92, and the Hall coefficient has been m easured at 4 K. The resistivity exhibits a relatively small temperatur e dependence. The magnitude of the room-temperature resistivity varies appreciably with composition, with a broad maximum around 250 muOMEGA cm near x almost-equal-to 0.5. The Hall coefficient is positive at x = 0.4 and increases to a maximum at x almost-equal-to 0.6. It becomes negative at x almost-equal-to 0.85 with a value comparable to that of liquid Al at the highest value of x. The positive values of the Hall c oefficient and their dramatic increase with x below x almost-equal-to 0. 5 are discussed in terms of current theories for a positive Hall co efficient.