DENSITY-OF-STATES FINE-STRUCTURE IN THE TUNNELING CONDUCTANCE OF Y-BA-CU-O FILMS - A COMPARISON BETWEEN EXPERIMENT AND THEORY

With improved signal-averaging techniques, the tunneling conductance f rom pulsed-laser-deposited films of YBa2Cu3O7-delta reveals a rich fin e structure in both the subgap and near-gap regions. A comparison of t his structure with calculations by Tachiki et al. yields excellent agr eement and indicates the origin of the fine structure is the density o f electronic states on the different layered planes of this high-T(c) material.