SUSCEPTOR-BASED RAPID THERMAL-PROCESSING SYSTEM AND ITS SILICIDE APPLICATION

The design concept and hardware configuration of a constant heat sourc e, susceptor-based dual wafer rapid thermal processing (RTP) system ar e described. The temperature measurement/control techniques and therma l characteristics of the RTP system are described. Typical process res ults in CoSi and TiSi formation using the RTP system are reported. Cha nge in sheet resistance uniformity before and after RTP steps and wafe r-to-wafer temperature repeatability were kept below 0.5% and 1 degree s C, respectively, in both processes. Due to the dual wafer process ca pability and steady state temperature control, a very high throughput at a minimal power consumption was realized. Many thermal processes us ed in furnaces can easily be converted to RTP processes without decrea sing cost performance and/or deteriorating process results by using th e RTP system.