AlN films were deposited by reactive magnetron sputtering with a roof-
shaped Al target and conventional planar target. The c-axis orientatio
n and the grain growth of ALN films were improved and the defects in t
he film were decreased, when the ion Bur bombarding the film decreased
. This trend was confirmed by depositing AIN films under various N-2 g
as pressures or external magnetic fields. These data indicate that the
re remains a considerable influence of ion bombardment in conventional
planar magnetron sputtering, but the use of a rooftype target is effe
ctive for decreasing the exposure of the film to plasma as a result of
a decrease in ion bombardment.