PREPARATION AND PROPERTIES OF SRBI2TA2O9 CERAMICS

The purpose of this paper is to investigate the preparation and proper ties of SrBi2Ta2O9 ceramics as capacitors and/or piezoelectric materia ls. Ordinarily fired (OF) samples were prepared by a conventional cera mic technique. Grain-oriented (GO) samples were prepared by the hot-fo rging method. High-density OF samples with density ratios of 95-96% to theoretical X-ray density were easily obtained at the optimized sinte ring temperature (1230 degrees C). In this OF sample, the Curie temper ature existed at 322 degrees C, and the dielectric constant at room te mperature was 135. SrBi2Ta2O9 ceramics did not deform smoothly at 1230 -1250 degrees C, and the maximum reduction ratio was about 0.7. The X- ray grain orientation factor of the GO sample was about 0.52. The coup ling factor k(33) Of the GO sample with f of 0.36 was 17.7%.