INFLUENCE OF OXYGEN ON THE FORMATION OF SI(111)-7X7 DOMAINS STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Authors
ISHIMARU T HOSHINO T KAWADA H SHIMADA K WATANABE T OHDOMARI I
Citation
T. Ishimaru et al., INFLUENCE OF OXYGEN ON THE FORMATION OF SI(111)-7X7 DOMAINS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 58(15), 1998, pp. 9863-9866
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
15
Year of publication
1998
Pages
9863 - 9866
Database
ISI
SICI code
0163-1829(1998)58:15<9863:IOOOTF>2.0.ZU;2-A
Abstract
Coverage of the 7 x 7-reconstructed region on quenched Si(111) surface s has been compared for two types of Si wafers with different oxygen c oncentration, Czochralski and modified float zone (m-FZ) wafers. The m -FZ wafer clearly showed the lower coverage, which suggested that oxyg en had some influence on the formation of a 7 x 7 structure. The activ ation energy of formation of the 7 x 7 structure has been estimated to be 2.4 eV. [S0163-1829(98)01939-0].