INTERFACE ROUGHNESS LOCALIZATION IN QUANTUM-WELLS AND QUANTUM WIRES

We studied the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. We measured the magnetoluminescence at different temperatures and analyzed the re sults with a model where the average microroughness, the magnetic fiel d, and the excitonic effects are treated within the same level of appr oximation. We were able to extract a quantitative estimate for the exc iton localization due to microroughness. Our results also demonstrate the efficiency of the temperature to detrap excitons from the interfac e roughness localization. [S0163-1829(98)03439-0].