EFFECT OF SURFACE ON DEFECT CREATION BY SELF-ION BOMBARDMENT OF SI(001)

We have studied defect formation and defect distributions in silicon u nder low-energy (25-800 eV) self-bombardment of the 2x1 terminated Si( 001) surface. We applied the classical molecular dynamics technique an d collected statistically significant averages to be able to detect de fect production trends in the energy dependence. The number of defects created in implantations was found to be a superlinear function of en ergy at low energies (<400 eV) and larger than the defect production i n the bulk up to about 1 keV. We have also examined the depth dependen ce of close-to-surface damage and explored the energy and time depende nce of the defect creation mechanisms and the sensitivity of the resul ts to the choice of the model potential. [S0163-1829(98)06239-0].