CHEMISORPTION OF DEUTERIUM ON AN ULTRATHIN GE FILM DEPOSITED OVER SI(100)-2X1 - EXISTENCE OF A DIDEUTERIDE PHASE

Authors
GHEYAS SI URISU T HIRANO S WATANABE H IWATA S AOYAGI M NISHIO M OGAWA H
Citation
Si. Gheyas et al., CHEMISORPTION OF DEUTERIUM ON AN ULTRATHIN GE FILM DEPOSITED OVER SI(100)-2X1 - EXISTENCE OF A DIDEUTERIDE PHASE, Physical review. B, Condensed matter, 58(15), 1998, pp. 9949-9954
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
15
Year of publication
1998
Pages
9949 - 9954
Database
ISI
SICI code
0163-1829(1998)58:15<9949:CODOAU>2.0.ZU;2-0
Abstract
Adsorption of atomic deuterium on ultrathin Ge film deposited over Si( 100) has been studied using Fourier-transformed infrared reflection ab sorption spectroscopy and reflection high-energy electron diffraction (RHEED) measurements. We established that high atomic deuterium exposu re of a Ge/Si(100) surface leads to a change in the RHEED pattern from 2x1 to 1x1. This change possibly is due to an overwhelming conversion of Ge monodeuterides to dideuterides. Etching of the Ge atoms by deut erium atoms has also clearly been observed. [S0163-1829(98)04539-1].