ANTIFERROMAGNETISM AND PHASE-SEPARATION IN ELECTRONIC MODELS FOR DOPED TRANSITION-METAL OXIDES

Authors
Citation
Sq. Shen et Zd. Wang, ANTIFERROMAGNETISM AND PHASE-SEPARATION IN ELECTRONIC MODELS FOR DOPED TRANSITION-METAL OXIDES, Physical review. B, Condensed matter, 58(14), 1998, pp. 8877-8880
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
14
Year of publication
1998
Pages
8877 - 8880
Database
ISI
SICI code
0163-1829(1998)58:14<8877:AAPIEM>2.0.ZU;2-X
Abstract
We investigate the ground state properties of electronic models for do ped transition-metal oxides. An effective t-J like Hamiltonian is deri ved from the case of strong Hund coupling between the conduction elect rons and localized spins by means of the projection technique. An attr active interaction for conduction electrons and an antiferromagnetic c oupling of the localized spin are obtained. A large ratio of the attra ction to effective electron hopping, which is modulated by the spin ba ckground, will lead to the phase separation. The antiferromagnetic pha se and the phase separation appear in the case of either high or low d ensity of electrons. The possible relevance of the phase separation to the charge stripe phase in doped transition-metal oxides is discussed . [S0163-1829(98)51238-6].