HIGH-EFFICIENCY GAINP-ALGAINP RIDGE-WAVE-GUIDE SINGLE-MODE LASERS OPERATING AT 650 NM

In this letter, the authors report a very high quantum efficiency of 9 1% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveg uide laser diodes operating at 650-nm range. The laser structure was g rown by solid-source molecular beam epitaxy. The laser diodes performe d stable single-mode operation up to 60 mW, Threshold current as low a s 50 mA was measured for 5.5 x 600 mu m(2) laser diodes. To the author s' best knowledge, this is among the best ever reported efficiency for visible lasers.