WAFER FUSION OF INFRARED-LASER DIODES TO GAN LIGHT-EMITTING HETEROSTRUCTURES

In this letter, we use wafer fusion to integrate AlGaInAs quantum-well (QW) laser heterostructures to GaN laser diode and light-emitting dio de (LED) structures. After fusion of the laser heterostructure to the GaN layers, AlGaInAs QW lasers are fabricated and characterized, Laser s of 15 x 510 mu m operate with a threshold of 20 mA and external diff erential quantum efficiency of 15.5%/facet at a wavelength of 820 nm, InGaN-GaN LED's, fabricated 75 mu m from the lasers, emit at 458 nm, T he operation of the lasers and LED's fused to GaN demonstrates that th e fused interface is mechanically robust, and the properties of fused heterostructures are not adversely affected by the fusion process.