HIGH-POWER NEAR-DIFFRACTION-LIMITED TAPERED AMPLIFIERS AT 1064 NM FOROPTICAL INTERSATELLITE COMMUNICATIONS

Citation
P. Chazan et al., HIGH-POWER NEAR-DIFFRACTION-LIMITED TAPERED AMPLIFIERS AT 1064 NM FOROPTICAL INTERSATELLITE COMMUNICATIONS, IEEE photonics technology letters, 10(11), 1998, pp. 1542-1544
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
10
Issue
11
Year of publication
1998
Pages
1542 - 1544
Database
ISI
SICI code
1041-1135(1998)10:11<1542:HNTAA1>2.0.ZU;2-B
Abstract
The realization of high-power tapered amplifiers at 1064 nm on a low-m odal gain structure is presented. More than 1.5-W continuous-wave opti cal output power at 3-A injection current is achieved with only 13-mW input optical power and a near-diffraction - limited output beam quali ty. The use of a low-modal gain structure in conjunction with a very l ow AR-coating value avoids the addition of cavity spoilers, The implem entation of such amplifiers in an optical intersatellite communication system is studied. The devices showed excellent resistance to 160-kra d proton irradiation. Preliminary aging tests on broad-area laser diod es demonstrate extrapolated lifetimes as long as 20000 h at 50 degrees C.