H. Ghafourishiraz et al., A NOVEL ANALYTICAL EXPRESSION OF SATURATION INTENSITY OF INGAASP TAPERED TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER STRUCTURES, IEEE photonics technology letters, 10(11), 1998, pp. 1545-1547
We have proposed a novel approximate analytical expression for saturat
ion intensity for tapered traveling-wave semiconductor laser amplifier
structures. The application of this analytical expression of saturati
on intensity has been demonstrated by considering the effect of gain s
aturation on polarization sensitivity of two tapered amplifier structu
res, linear and exponential tapered amplifier structures. It is found
that polarization sensitivity of the tapered amplifier structure is se
veral decibels higher than that of passive tapered waveguides in unsat
urated condition. Polarization sensitivity of the two tapered amplifie
r structures has also been investigated in a highly saturated conditio
n. The combined effects of mode conversion and gain saturation on fund
amental TE gain have also been investigated using the proposed analyti
cal expression for saturation intensity.