ELECTRICAL-PROPERTIES OF SOL-GEL PROCESSED BARIUM-TITANATE FILMS

Citation
Hb. Sharma et Hnk. Sarma, ELECTRICAL-PROPERTIES OF SOL-GEL PROCESSED BARIUM-TITANATE FILMS, Thin solid films, 330(2), 1998, pp. 178-182
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
330
Issue
2
Year of publication
1998
Pages
178 - 182
Database
ISI
SICI code
0040-6090(1998)330:2<178:EOSPBF>2.0.ZU;2-0
Abstract
The sol-gel technique has been used to prepare ferroelectric barium ti tanate (BaTiO3) films. The electrical properties of the films have bee n investigated systematically. The room temperature dielectric constan t (epsilon) and loss tangent (tan delta) at 1 kHz were respectively fo und to be 370 and 0.012. Both epsilon and tan delta showed anomaly pea ks at 125 degrees C. The room temperature remanant polarization (P-t) and coercive field (E-c) were found to be 3.2 mu C/cm(2) and 30 kV/cm, respectively. The capacitance-voltage (C-V) and conductance-voltage ( G-V) characteristics also showed hysteresis effect. The temperature va riation of C-V and G-V characteristics also confirms the ferroelectric to paraelectric phase transition at 125 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.