LIGHT-HOLE RESONANT-TUNNELING THROUGH TENSILE-STRAINED GAINAS QUANTUM-WELLS

We have experimentally investigated the light- and heavy-hole states i n tensile-strained GaInAs quantum wells using photoluminescence and ph otocurrent spectroscopies. Under special conditions, the strain result ing from the lattice mismatch is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level becomes t he ground state). We obtained an experimental light-to-heavy-hole spli tting of 50 meV in agreement with calculations. To take advantage of t his situation, we realized and characterized the first p-i-p resonant tunnelling diode on an InP substrate. Resonances are clearly visible i n the conductance-voltage characteristics but the first resonance is n ot yet enhanced as expected in this structure. We discuss the reasons that prevent the observation of the first light-hole resonance. (C) 19 98 Academic Press.