SYNTHETIC SEMICONDUCTOR DIAMOND ELECTRODES - THE COMPARATIVE-STUDY OFTHE ELECTROCHEMICAL-BEHAVIOR OF POLYCRYSTALLINE AND SINGLE-CRYSTAL BORON-DOPED FILMS
Yv. Pleskov et al., SYNTHETIC SEMICONDUCTOR DIAMOND ELECTRODES - THE COMPARATIVE-STUDY OFTHE ELECTROCHEMICAL-BEHAVIOR OF POLYCRYSTALLINE AND SINGLE-CRYSTAL BORON-DOPED FILMS, Journal of electroanalytical chemistry [1992], 455(1-2), 1998, pp. 139-146
Capacitance and potentiodynamic measurements were conducted on single
crystal (homoepitaxial) and polycrystalline boron-doped diamond thin-f
ilm electrodes. The impedance characteristics and kinetic data in the
Ce3+/4+ redox system, even if having a great deal of variability, appe
ared to be similar for the two kinds of diamond electrodes, whereas th
e kinetics of redox reactions on crystalline diamond and amorphous dia
mond-like carbon films differ significantly. These data in aggregate l
ead to a tentative conclusion that the electrochemical behaviour of po
lycrystalline diamond is determined by the diamond crystallites proper
, rather than by the disordered carbon of the intercrystallite boundar
ies. The concentration of uncompensated accepters in diamond was estim
ated from the linear and non-linear impedance data. The ways of presen
tation of Mott-Schottky plots for semiconductor electrodes are discuss
ed for the case of frequency-dependent differential capacitance. (C) 1
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