INAS GASB INTERFACES - THE PROBLEM OF BOUNDARY-CONDITIONS/

We present here a derivation of phenomenological boundary conditions f or envelope functions at the interface between an InAs layer and a GaS b layer. The overlap of the valence band of GaSb with the conduction b and of InAs leads to a coupling between electrons with total angular m omentum 1/2 and holes with total angular momentum 3/2. The method that we use to match these wave-functions is that of the minimizing of the total energy of the system including the surface energy. We consider the different spinor characters of the states explicitly, and derive t he required boundary conditions, which are not dependent on any specif ic microscopic model. The proposed approach is general, and may be use d to obtain boundary conditions for other complicated cases of interfa ces.