ELECTRONIC BAND-GAPS IN ONE-DIMENSIONAL COMB STRUCTURES OF SIMPLE METALS

Citation
Jo. Vasseur et al., ELECTRONIC BAND-GAPS IN ONE-DIMENSIONAL COMB STRUCTURES OF SIMPLE METALS, Journal of physics. Condensed matter (Print), 10(40), 1998, pp. 8973-8981
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
10
Issue
40
Year of publication
1998
Pages
8973 - 8981
Database
ISI
SICI code
0953-8984(1998)10:40<8973:EBIOCS>2.0.ZU;2-A
Abstract
The electronic properties of comb structures composed of one-dimension al atomic wires of alkali elements are studied. The wires and network of wires are assumed to be formed either on substrates or through netw orks of metal filled nanotubes. A tight-binding model is used to model the electronic structure of the wires assuming that the atoms are con strained by the substrate or nanotubes to separations exceeding their equilibrium distance. The binding between side wires and the main line ar backbone in the comb network opens gaps in the density of states. T he band structure of the periodic combs varies significantly with the number of atoms in the side wires as well as the periodicity of the si de wires along the backbone. For some specific geometries, complete ba nd gaps may be opened about the Fermi level. Finite combs may be desig ned to produce devices with electronic properties similar to those of the periodic systems and, in particular, with stop bands in their tran smission spectrum.