LOW-ENERGY NITROGEN-ION DOPING INTO GAAS AND ITS OPTICAL-PROPERTIES

Authors
SHIMA T MAKITA Y KIMURA S SANPEI H SANDHU A
Citation
T. Shima et al., LOW-ENERGY NITROGEN-ION DOPING INTO GAAS AND ITS OPTICAL-PROPERTIES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 301-305
Citations number
15
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
253
Issue
1-2
Year of publication
1998
Pages
301 - 305
Database
ISI
SICI code
0921-5093(1998)253:1-2<301:LNDIGA>2.0.ZU;2-D
Abstract
Nitrogen (N) ions were impinged during the epitaxial growth of GaAs us ing combined ion beam and molecular beam epitaxy (CIBMBE) method. Low- temperature photoluminescence measurements showed that incorporated ni trogen ([N] < similar to 1 x 10(18) cm(-3)) is optically active with a substrate temperature of 550 degrees C and a N+ ion acceleration ener gy of 100 eV. For higher [N] of similar to 2 x 10(18) cm(-3), N-relate d emissions can be found after high temperature (650-850 degrees C) an nealing. We discuss the annealing effects and also the novel emissions found after annealing at high temperature (750 degrees C) with a [N] of similar to 1 x 10(19) cm(-3). (C) 1998 Elsevier Science S.A. All ri ghts reserved.