THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .1. GROWTH AND COALESCENCE OF DEFECT-FREE SILICON LAYERS

We have investigated by liquid-phase epitaxy (LPE) the coalescence of defect-free silicon-on-insulator (SOI) layers. The SOI lamellae grow o ut laterally from neighbouring seeding windows and spread over the SiO 2. In our study, the seeding window edges are straight. The long windo w edges are parallel and extend in the (111) substrate plane in [112BA R] direction. Coalescence of SOI lamellae takes place without the form ation of defects whenever it begins at one point and then proceeds in directions parallel to the longer edges of the windows in a ''zip''-li ke mechanism. Defect-free coalescence seams reach lengths of up to 150 mum.