Using AC diamagnetic and transport measurements we have derived a thre
e-dimensional H-J(c)-T diagram for high-quality Bi2223/Ag tapes. The d
iagram shows an abrupt decrease of critical current caused by the melt
ing of a vortex glass. The melting line was defined as the contour lin
e for the J(c)(H, T) surface at J(c)approximate to Y 10 A cm(-2), wher
e J(c) showed the steepest decrease with H and T. This line coincided
with the locus of the chi''(T) maximum, at a frequency approximate to
110 Hz and an AG field amplitude approximate to 0.1 Oe. The melting li
ne reflects the process of the separation of unit-cell stacks. The mos
t important are the low-number stacks that contain one to three unit c
ells. These stacks have the lowest Kosterlitz-Thouless transition temp
eratures and the lowest corresponding vortex melting temperatures. A m
agnetic field causes the separation of the stacks and reduces T-m in e
ach stack to the melting temperature of the lower stack. At the univer
sal T-KT, the vortex melting line is the combination of T-m(H) for dif
ferent, mainly bw-number, stacks.