EFFECT OF PRESSING AND LI DOPING ON SUPERCONDUCTING PROPERTIES OF AG-SHEATHED BI-2223 TAPES

For Bi-2223 Ag-sheathed tapes, pressing conditions between sintering w ere optimized. It was found that with an increase in the pressure from 1 t cm(-2) to 10 t cm(-2), I-c of the tape was increased. To elucidat e whether Li doping increases the I-c of the tape as reported in the b ulk sample, Li doping was carried out. It was found that doping of 0.1 -0.3 at.% Li increased I-c by 10%, which is consistent with the bulk d ata. As a result of I-c-B measurement at a temperature of 4.2 K, it wa s found that I-c/I-c (0 T) of the 0.3 at.% Li-doped tape under a magne tic flux density of 10 T was 20% higher than that of the non-doped tap es.