MICROSTRUCTURE AND PHOTOLUMINESCENCE OF A-SIOX-H

Authors
MA ZX LIAO XB CHENG WC HE J YUE GZ WANG YQ KONG GL
Citation
Zx. Ma et al., MICROSTRUCTURE AND PHOTOLUMINESCENCE OF A-SIOX-H, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 41(9), 1998, pp. 1002-1008
Citations number
16
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences → ACNP
ISSN journal
10016511
Volume
41
Issue
9
Year of publication
1998
Pages
1002 - 1008
Database
ISI
SICI code
1001-6511(1998)41:9<1002:MAPOA>2.0.ZU;2-X
Abstract
Two strong photoluminescence (PL) bands in the spectral range of 550-9 00 nm have been observed at room temperature from a series of a-SiOx:H films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. One is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 11 70 degrees C annealing in N-2 atmosphere. In conjunction with infrared (IR) and micro-Raman spectra, it is thought that the two PL bands are associated with a-Si clusters in the SiOx network and nanocrystalline silicon in SiO2, respectively.