EPITAXIAL-GROWTH OF BI4TI3O12 THIN-FILMS ON SRTIO3(100) BY USING DIPPING-PYROLYSIS PROCESS

Authors
Citation
Ks. Hwang et Bh. Kim, EPITAXIAL-GROWTH OF BI4TI3O12 THIN-FILMS ON SRTIO3(100) BY USING DIPPING-PYROLYSIS PROCESS, Journal of the Korean Physical Society, 33(4), 1998, pp. 511-513
Citations number
8
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
33
Issue
4
Year of publication
1998
Pages
511 - 513
Database
ISI
SICI code
0374-4884(1998)33:4<511:EOBTOS>2.0.ZU;2-I
Abstract
Epitaxial thin films of bismuth titanate (Bi4Ti3O12) have been grown b y the dipping-pyrolysis process on SrTiO3(100) substrates by using met al naphthenates as starting materials. Homogeneous Bi-Ti solutions wit h toluene were spin-coated onto the substrates and pyrolyzed at 500 de grees C for 10 min in air. X-ray diffraction theta-2 theta scans confi rmed that the c-axis-oriented Bi4Ti3O12 thin films with good crystalli nity and with no second phases were obtained after heat-treatment at 7 50 degrees C for 30 min in air. The X-ray pole-figure analysis showed that the films had an epitaxial relationship with the SrTiO3 substrate .