Ks. Hwang et Bh. Kim, EPITAXIAL-GROWTH OF BI4TI3O12 THIN-FILMS ON SRTIO3(100) BY USING DIPPING-PYROLYSIS PROCESS, Journal of the Korean Physical Society, 33(4), 1998, pp. 511-513
Epitaxial thin films of bismuth titanate (Bi4Ti3O12) have been grown b
y the dipping-pyrolysis process on SrTiO3(100) substrates by using met
al naphthenates as starting materials. Homogeneous Bi-Ti solutions wit
h toluene were spin-coated onto the substrates and pyrolyzed at 500 de
grees C for 10 min in air. X-ray diffraction theta-2 theta scans confi
rmed that the c-axis-oriented Bi4Ti3O12 thin films with good crystalli
nity and with no second phases were obtained after heat-treatment at 7
50 degrees C for 30 min in air. The X-ray pole-figure analysis showed
that the films had an epitaxial relationship with the SrTiO3 substrate
.