SPIRAL INDUCTORS ON SILICON - STATUS AND TRENDS

Authors
BURGHARTZ JN
Citation
Jn. Burghartz, SPIRAL INDUCTORS ON SILICON - STATUS AND TRENDS, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(6), 1998, pp. 422-432
Citations number
38
Categorie Soggetti
Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
Journal title
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING → ACNP
ISSN journal
10964290
Volume
8
Issue
6
Year of publication
1998
Pages
422 - 432
Database
ISI
SICI code
1096-4290(1998)8:6<422:SIOS-S>2.0.ZU;2-#
Abstract
The status of the integration, the modeling, and the layout of spiral inductors on silicon substrates for rf circuits are reviewed. A summar y of the current research activity in this field is presented. The pos sible inductor implementations are categorized either as conservative, following the silicon main stream, or as innovative approaches. It is concluded that the spiral inductor on silicon is a feasible device an d finds extensive use in the design of future silicon-based rf circuit s. (C) 1998 John Wiley & Sons, Inc.