QUANTITATIVE CHEMICAL DEPTH PROFILES OF ZRN BN MULTILAYERS/

Multilayers of ZrN/BN have been deposited on Si(100) using a double io n beam sputtering system. The multilayers have been characterized by t ransmission electron microscopy, Rutherford backscattering spectroscop y and Auger electron spectroscopy (AES) depth profiles in order to get a quantitative analysis of the components and contaminants in the dif ferent layers and at their respective interfaces. Factor analysis is u sed to deconvolute the different chemical states of the components and to identify secondary phases and compounds that determine the quality of the multilayer. Two secondary phases have been observed at the dif ferent interfaces: one is associated with the incorporation of oxygen, mainly in the zirconium layer, and leads to the formation of ZrNxOy. In addition we have observed that Ar bombardment during the AES depth profile leads to the formation of ZrBxNy in all the interfaces. (C) 19 98 John Wiley & Sons, Ltd.