INVESTIGATION OF HETEROSTRUCTURE FERROMAGNETIC SEMICONDUCTOR-SEMICONDUCTOR IN THE MILLIMETER AND SUBMILLIMETER MICROWAVE RANGE

Microwave absorption and emission at a contact between a ferromagnetic semiconductor (FMS) and a semiconductor (S): n-HgCr2Se4-n-InSb, p-HgC r2Se4-n-InSb and n-EuO-n-InSb have been studied in the millimeter and submillimeter range under the passage of a current. These results are explained by the injection of polarized charge carriers from the FMS t o the S and the creation of a non-equilibrium population of Zeeman lev els in the S. (C) 1998 Published by Elsevier Science B.V.