1.3 MU-M ROOM-TEMPERATURE GAAS-BASED QUANTUM-DOT LASER

Room-temperature lasing at the wavelength of 1.31 mu m is achieved fro m the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm(2) is obtained at a wa velength of 1.23 mu m. The room-temperature lasing at 1.31 mu m is obt ained with mm a threshold current density of 270 A/cm(2) using high-re flectivity facet coatings. The temperature-dependent threshold with an d without high-reflectivity end mirrors is studied, and ground-state l asing is obtained up to the highest temperature investigated of 324 K. (C) 1998 American Institute of Physics. [S0003-6951(98)03644-4].