STRESS AND RELIEF OF MISFIT STRAIN OF GE SI(111)/

The intrinsic stress and morphology of the Stranski-Krastanow system G e/Si(111) have been investigated at deposition temperatures of 700-950 K. In a broad range of intermediate temperatures, only one distinct d ecline of stress is observed at the onset of three-dimensional islandi ng. Supported by a recent transmission electron microscopy study, the results demonstrate that the strain of Ge/Si(111), where the substrate surface in contrast to Ge/Si(001) is the glide plane for dislocations , is relieved by incorporation and continuous rearrangement of disloca tions during the island stage. (C) 1998 American Institute of Physics. [S0003-6951(98)00644-5].