Jm. Jancu et al., QUANTUM TAILORING OF OPTICAL-TRANSITIONS IN INXGA1-X AS ALAS STRAINEDQUANTUM-WELLS/, Applied physics letters, 73(18), 1998, pp. 2621-2623
The optical properties of n-doped InxGa1-xAs/AlAs pseudomorphic quantu
m wells grown on GaAs(001) are investigated as a function of layer thi
ckness and indium concentration. The nature of interband and intersubb
and transitions is clarified using an improved tight-binding model and
a combination of low-temperature photoluminescence spectroscopy and i
ntersubband absorption studies. A type I-->type II crossover is found
to occur in very narrow wells. Moreover, for appropriate quantum-well
parameters, tailoring of the intersubband transition wavelength down t
o the 1.2 mu m range appears feasible while retaining the type I chara
cter of the band alignment. These results provide a valid framework fo
r the implementation of InxGa1-xAs/AlAs heterostructures for ultrafast
optical communication applications. (C) 1998 American Institute of Ph
ysics. [S0003-6951(98)04944-4]