LOW-TEMPERATURE-GROWN GAAS ENHANCED WET THERMAL-OXIDATION OF AL0.98GA0.02AS

The effects of incorporating low-temperature-grown GaAs (LT GaAs) into the layer structure of Al0.98Ga0.02As/GaAs are studied. Results show that the structures containing a 300 nm layer of LT GaAs have faster o xidation rates and lower oxidation temperatures compared to reference samples without the LT GaAs layer. This letter will discuss the mechan isms involved in the oxidation rate increase, attributed to the LT GaA s enhancing the transport of As species during the oxidation process. (C) 1998 American Institute of Physics. [S0003-6951(98)04544-6]