EFFICIENT GETTERING OF LOW CONCENTRATIONS OF COPPER CONTAMINATION TO HYDROGEN-INDUCED NANOCAVITIES IN SILICON

Authors
KINOMURA A WILLIAMS JS WONGLEUNG J PETRAVIC M NAKANO Y HAYASHI Y
Citation
A. Kinomura et al., EFFICIENT GETTERING OF LOW CONCENTRATIONS OF COPPER CONTAMINATION TO HYDROGEN-INDUCED NANOCAVITIES IN SILICON, Applied physics letters, 73(18), 1998, pp. 2639-2641
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
18
Year of publication
1998
Pages
2639 - 2641
Database
ISI
SICI code
0003-6951(1998)73:18<2639:EGOLCO>2.0.ZU;2-8
Abstract
The efficient gettering to hydrogen-induced cavities in Si has been su ccessfully demonstrated for low concentrations of Cu, unintentionally introduced during wafer processing. Secondary ion mass spectrometry sh owed up to 5 X 10(12) cm(-2) Cu could be introduced into a silicon waf er and trapped at cavities. Neutron activation analysis indicated that , in samples with cavities, the Cu within the bulk was below the detec tion limit (around 4 X 10(11) cm(-2)), while Cu was detected throughou t the bulk of samples without cavities. (C) 1998 American Institute of Physics. [S0003-6951(98)02144-5]