DIRECT PATTERNING OF SURFACE QUANTUM-WELLS WITH AN ATOMIC-FORCE MICROSCOPE

We employ an atomic force microscope to directly pattern the electron system of InAs-AlSb surface quantum wells. Sharp and sturdy electron b eam deposited tips are developed to withstand the comparatively high ( approximate to mu N) forces in the direct patterning process. By direc t patterning the InAs surface quantum well we modulate the electron sy stem without any mask. We are therefore able to directly transfer the excellent lithographic resolution of atomic force microscopy to an ele ctron system. The magnetoresistance of such fabricated antidot arrays is discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)0 4744-5]