COSI2 FORMATION IN CONTACT SYSTEMS BASED ON TI-CO ALLOY WITH LOW COBALT CONTENT

Authors
GROMOV DG MOCHALOV AI PUGACHEVICH VP
Citation
Dg. Gromov et al., COSI2 FORMATION IN CONTACT SYSTEMS BASED ON TI-CO ALLOY WITH LOW COBALT CONTENT, Applied physics A: Materials science & processing, 61(5), 1995, pp. 565-567
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
61
Issue
5
Year of publication
1995
Pages
565 - 567
Database
ISI
SICI code
0947-8396(1995)61:5<565:CFICSB>2.0.ZU;2-A
Abstract
The process of integrated-circuit contact formation based on Ti-Co all oy with low content of cobalt has been investigated. By AES and XRD it is shown that nitrogen doping of the alloy film during magnetron depo sition and its subsequent annealing at 800-850 degrees C allow simulta neously to obtain a CoSi2 contact layer and a diffusion barrier layer on the basis of TiN. Electrical characteristics of Schottky barrier an d ohmic contacts have been studied.