PHOTOEXCITATION OF MAGNETOSENSITIVE POINT-DEFECTS IN IONIC-CRYSTALS

Citation
Yi. Golovin et al., PHOTOEXCITATION OF MAGNETOSENSITIVE POINT-DEFECTS IN IONIC-CRYSTALS, Crystallography reports, 43(5), 1998, pp. 858-862
Citations number
8
Categorie Soggetti
Crystallography
Journal title
ISSN journal
10637745
Volume
43
Issue
5
Year of publication
1998
Pages
858 - 862
Database
ISI
SICI code
1063-7745(1998)43:5<858:POMPII>2.0.ZU;2-X
Abstract
It is found that illumination of ionic crystals with the light of the optical range results in suppression of the sensitivity of some point defects to the magnetic field effect. It is established that the relax ation kinetics of light- or magnetic-field-induced metastable states o f defects is bimolecular. Modification of illumination and magnetic fi eld-induced point defects results in an increase of dislocation paths under mechanical loading of the specimen or in a decrease of these pat hs under the magnetic-field effect. The differences between the types of the processes occurring with the participation of light- and magnet ic-field-induced point defects are established.