MISFIT DISLOCATION PATTERNING IN THIN-FILMS

Citation
K. Cholevas et al., MISFIT DISLOCATION PATTERNING IN THIN-FILMS, Physica status solidi. b, Basic research, 209(2), 1998, pp. 295-304
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
209
Issue
2
Year of publication
1998
Pages
295 - 304
Database
ISI
SICI code
0370-1972(1998)209:2<295:MDPIT>2.0.ZU;2-Q
Abstract
The emergence of non-uniform distributions of misfit dislocations (MDs ) in thin films is discussed. A three-element reaction-diffusion model for the kinetics of gliding, climbing and misfit dislocations as prop osed by Romanov and Aifantis (R-A model) is used to describe the corre sponding pattern. The non-local integral expression for the effective stress field at the film surface, which is the main driving force for MD patterning, is approximated by a gradient expression in the MD dens ity. The corresponding gradient coefficients have an explicit dependen ce on the film thickness which, thus, defines a characteristic length for the pattern. Analytical solutions of the model are obtained which describe transient spatially uniform dislocation distributions, as wel l as steady-state spatially periodic dislocation distributions. Linear stability analysis around a uniform steady-state solution demonstrate s the formation of MD patches as a result of a dynamical spatial insta bility. This instability is governed by the competition of the spatial coupling provided by the MD stress field and a diffusion-like term en tering the dynamics of the gliding dislocations. A stochastic argument for the corresponding diffusion coefficient, which depends on the ave rage spacing between MDs (thus providing a second characteristic lengt h scale), yields an explanation for not observing MD patterns for film thicknesses below 1 mu m.