INTERFACE ROUGHNESS FRACTALITY EFFECTS ON THE ELECTRON-MOBILITY IN SEMICONDUCTING QUANTUM-WELLS

The influence of interface electron scattering on electron mobility in semiconducting quantum wells is analyzed theoretically in the Born ap proximation. The interface roughness is assumed to be random self-affi ne fractal characterized by roughness exponent H, correlation length x i, and rms amplitude Delta. In particular, the ratio of electron mobil ities for the Fermi level slightly above and below the second miniband edge (or for the well width above and below a critical width d(c) for a constant areal electron density) is calculated. It is shown that th e correlation length xi and roughness exponent H have pronounced effec ts on electron mobility.