BROAD AREA SEMICONDUCTOR-LASERS WITH IMPROVED NEAR AND FAR FIELDS USING ENHANCED CURRENT SPREADING

Authors
OBRIEN PA SKOVGAARD PMW MCINERNEY JG ROBERTS JS
Citation
Pa. Obrien et al., BROAD AREA SEMICONDUCTOR-LASERS WITH IMPROVED NEAR AND FAR FIELDS USING ENHANCED CURRENT SPREADING, Electronics Letters, 34(20), 1998, pp. 1943-1944
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
20
Year of publication
1998
Pages
1943 - 1944
Database
ISI
SICI code
0013-5194(1998)34:20<1943:BASWIN>2.0.ZU;2-L
Abstract
Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing,the tran vserse current injection profile by introducing a thick (10 mu m) p-Ga As layer to increase carrier diffusion. This results in narrower and m ore symmetrical far fields compared to standard broad area lasers, esp ecially when operating at high output powers.