1.56-1.61 mu m range modulator-integrated distributed-feedback laser d
iodes (DFB/MODs) of different wavelengths are successfully demonstrate
d for applications in 1.58 mu m band WDM systems. They were fabricated
on a single wafer by using narrow-stripe selective MOVPE with a novel
growth-time-modulation (GTM) technique. Uniform and high-performance
characteristics such as a threshold current less than 5 mA and an exti
nction ratio larger than 16 dB at -2 V were achieved.