16-PIXEL LINEAR-ARRAY OF NEAR-INFRARED PHOTODETECTORS IN POLYCRYSTALLINE GE ON SI

Authors
COLACE L MASINI G GALLUZZI F ASSANTO G
Citation
L. Colace et al., 16-PIXEL LINEAR-ARRAY OF NEAR-INFRARED PHOTODETECTORS IN POLYCRYSTALLINE GE ON SI, Electronics Letters, 34(20), 1998, pp. 1968-1969
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
20
Year of publication
1998
Pages
1968 - 1969
Database
ISI
SICI code
0013-5194(1998)34:20<1968:1LONPI>2.0.ZU;2-Q
Abstract
A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 m u m pitch. A responsivity of 16 mA/W was measured at 1.3 mu m with nan osecond response time.