STIMULATED-EMISSION FROM AS-GROWN GAN HEXAGONS BY SELECTIVE-AREA GROWTH HYDRIDE VAPOR-PHASE EPITAXY

Authors
HERZOG WD GOLDBERG BB UNLU MS SINGH R DABKOWSKI FP
Citation
Wd. Herzog et al., STIMULATED-EMISSION FROM AS-GROWN GAN HEXAGONS BY SELECTIVE-AREA GROWTH HYDRIDE VAPOR-PHASE EPITAXY, Electronics Letters, 34(20), 1998, pp. 1970-1971
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
20
Year of publication
1998
Pages
1970 - 1971
Database
ISI
SICI code
0013-5194(1998)34:20<1970:SFAGHB>2.0.ZU;2-C
Abstract
The authors report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy. Th e threshold for bulk stimulated emission was found to be 3.4 MW/cm(2) with an emission linewidth of 1.2 nm.