BACKGATING MODEL INCLUDING SELF-HEATING FOR LOW-FREQUENCY DISPERSIVE EFFECTS IN III-V FETS

Authors
SANTARELLI A FILICORI F VANNINI G RINALDI P
Citation
A. Santarelli et al., BACKGATING MODEL INCLUDING SELF-HEATING FOR LOW-FREQUENCY DISPERSIVE EFFECTS IN III-V FETS, Electronics Letters, 34(20), 1998, pp. 1974-1976
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
20
Year of publication
1998
Pages
1974 - 1976
Database
ISI
SICI code
0013-5194(1998)34:20<1974:BMISFL>2.0.ZU;2-6
Abstract
A new approach is proposed which takes into account both traps and the rmal phenomena for the modelling of deviations between static and dyna mic drain current characteristics in III-V field effect transistor;. T he model is based on the well-known 'backgating' concept and can easil y be identified on the basis of conventional static drain current char acteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.