INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS

Authors
MASSON P GHIBAUDO G AUTRAN JL MORFOULI P BRINI J
Citation
P. Masson et al., INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS, Electronics Letters, 34(20), 1998, pp. 1977-1979
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
20
Year of publication
1998
Pages
1977 - 1979
Database
ISI
SICI code
0013-5194(1998)34:20<1977:IOQMDF>2.0.ZU;2-K
Abstract
The influence of the quadratic attenuation mobility factor on the low frequency l/f noise in MOS transistors is investigated. By taking into account the correlated mobility fluctuations, the influence of the su rface roughness scattering on the input referred noise under strong in version is analysed. The quadratic attenuation mobility factor is foun d to reduce the impact of the mobility fluctuations on the normalised drain current noise.