SPATIAL-DISTRIBUTION, BUILDUP, AND ANNEALING OF RADIATION DEFECTS IN SILICON IMPLANTED BY HIGH-ENERGY KRYPTON AND XENON IONS

An x-ray diffraction study of defect formation in silicon irradiated b y Kr+ (210 MeV, 8 x 10(12) -3 x 10(14) cm(-2)) and Xe+ (5.6 BeV, 5 x 1 0(11) - 5 x 10(13) cm(-2)) ions is reported. It has been established t hat irradiation produces a defect structure in the bulk of silicon, wh ich consists of ion tracks whose density of material is lower than tha t of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the prev iously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorpora tion of stable defects by irradiation with high- energy ions is lower than that reached by implanting medium-mass ions with energies of a fe w hundred keV. (C) 1998 American Institute of Physics. [S1063-7834(98) 01309-4].