DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/

A study is reported of steady- and nonsteady-state photoluminescence o f intentionally undoped and uniformly silicon-doped type-II (GaAs)(7)( AlAs)(9) superlattices grown by MBE simultaneously on (311)A- and (100 )-oriented GaAs substrates. It has been established that at elevated t emperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the Al As layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined . (C) 1998 American Institute of Physics. [S1063-7834(98)03609-0].