ON THE TRANSMITTANCE PROPERTIES OF ELECTROLYTICALLY DEPOSITED THIN ZINC-OXIDE FILMS

Authors
NGCHENGCHIN F ROSLIN M GU ZH FAHIDY TZ
Citation
F. Ngchengchin et al., ON THE TRANSMITTANCE PROPERTIES OF ELECTROLYTICALLY DEPOSITED THIN ZINC-OXIDE FILMS, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 71-72
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics (Print) → ACNP
ISSN journal
00223727
Volume
31
Issue
19
Year of publication
1998
Pages
71 - 72
Database
ISI
SICI code
0022-3727(1998)31:19<71:OTTPOE>2.0.ZU;2-V
Abstract
The effect of incident radiation in the ultraviolet-to-visible light t ransition region on the transmittance properties of thin zinc oxide la yers deposited electrolytically on ITO-coated glass substrates has bee n studied and the optical band gap-layer thickness relationship has be en established. The results indicate the viability of a low-temperatur e deposition process yielding transmittance properties comparable to t hose exhibited by conventionally obtained ZnO layers.