THE INFLUENCE OF STRUCTURAL DEFECTS IN ZNSE GAAS HETEROSTRUCTURES ON LUMINESCENCE PROPERTIES/

Cathodoluminescence (CL) measurements were carried out on ZnSe/GaAs he terostructures grown by metal-organic vapour-phase epitaxy, partly wit h different pre-growth treatments. The influence of structural defects on the luminescence properties of ZnSe epilayers both above and below the experimentally obtained value of the critical thickness for strai n relaxation were studied. The CL results combined with scanning trans mission electron microscopy demonstrate that there is a correlation be tween structural defects and the deep-level emission at around 580 nm named the SA emission. In addition, a strong influence of the pre-grow th treatment on the crystalline quality of epilayers of ZnSe was obser ved.